| PART |
Description |
Maker |
| PCZ33781EKR2 PCZ33781EK |
Quad DSI 2.02 Master with Differential Drive and Frequency Spreading
|
Freescale Semiconductor, Inc
|
| 2SA1522 0089 2SC3916 |
NPN Epitaxial Planar Silicon Transistors Switching Applications (with Bias Resistance)
PNP Epitaxial Planar Silicon Transistors Switching Applications (with Bias Resistance)
From old datasheet system
PNP/NPN Epitaxial Planar Silicon Transistors
|
Sanyo
|
| 2SA1526 0093 2SC3920 |
NPN Epitaxial Planar Silicon Transistors Switching Applications (with Bias Resistance)
PNP Epitaxial Planar Silicon Transistors Switching Applications (with Bias Resistance)
From old datasheet system
PNP/NPN Epitaxial Planar Silicon Transistors
|
Sanyo
|
| 2SC3917 |
NPN Epitaxial Planar Silicon Transistors Switching Applications (with Bias Resistance)
|
SANYO
|
| 2SA1529 |
PNP Epitaxial Planar Silicon Transistors Switching Applications (with Bias Resistance)
|
SANYO
|
| IRFR5410TRLPBF IRFR5410TRPBF IRFR5410TRRPBF IRFR54 |
13 A, 100 V, 0.205 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
Ultra Low On-Resistance
Ultra Low On-Resistance
ULTRA LOW ON RESISTANCE
|
International Rectifier
|
| FC123 |
PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)
|
SANYO[Sanyo Semicon Device]
|
| 2SK3018 |
Low on-resistance. Fast switching speed. Silicon N-channel MOSFET Drive circuits can be simple.
|
TY Semiconductor Co., Ltd
|
| 2SA1527 2SC3921 |
NPN Epitaxial Planar Silicon Transistors Switching Applications (with Bias Resistance)
PNP Epitaxial Planar Silicon Transistors Switching Applications (with Bias Resistance)
PNP/NPN Epitaxial Planar Silicon Transistors
|
Sanyo
|
| ADG1419 ADG1419BCPZ-REEL7 ADG1419BRMZ ADG1419BRMZ- |
2.1 Ω Max On Resistance ±15 V/12 V/±5 V iCMOS SPDT Switch; Package: Micro SOIC; No of Pins: 8; Temperature Range: Ind SGL POLE DOUBLE THROW SWITCH, PDSO8
2.1 Ω On Resistance, ±15 V/ 12 V/±5 V iCMOS SPDT Switch
2.1 楼? On Resistance, 隆戮15 V/ 12 V/隆戮5 V iCMOS SPDT Switch
|
Analog Devices, Inc.
|
| IRFP2410 |
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon
|
International Rectifier
|
